In the last few years, a large number of scientific publications dealt with the study of zinc oxide nanowires. The reason for this intensive research of zinc oxide nanostructures is given by the wide field of possible applications in the domains of optoelectronics and spintronics. On the other side, by ZnO doping with transitional metals one can obtain a room temperature diluted magnetic semiconductor with high Curie temperature; this property making ZnO a good candidate as a material for spintronic applications above room temperature. The present work has as main objective preparation of ZnO nanowires doped with Cu and Mn ions. By doping ZnO with manganese the possibility of obtaining diluted magnetic semiconductor nanowires will be opened; co doping with copper ions will facilitate the control of charge carriers responsible with the exchange interaction contributing in this way to the increase of the Curie temperature and luminescence yield for the studied structures. The properties of doped and undoped ZnO semiconductor are sensitive to the preparations conditions. We prepared by electrochemical deposition one-dimensional nanostructures having uniform diameters using polycarbonate membranes as templates. Nanowires morphology, composition and structure were characterized by scanning electron microscopy, energy dispersive X ray analysis and X ray diffraction, respectively.

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