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Fabrication and properties of multisegment metal-semiconductor-metal nanowires

Ionut Marius Enculescu 1Elena Matei 1Marian Sima 1Monica Enculescu 1Cornel Ghica 1Lucian Ion 2Stefan Antohe 2Reinhard Neumann 3

1. National Institute for Materials Physics, Bucharest- Magurele 010555, Romania
2. University of Bucharest, Faculty of Physics, Bucharest-Magurele mg-11, Bucharest 76900, Romania
3. Gesellschaft für Schwerionenforschung (GSI), Planckstraße 1, Darmstadt 64291, Germany


Over the last decade the research focusing on the fabrication of new devices based on semiconductor nanowires increased strongly. New methods for preparing semiconductor nanowires were extensively developed during this period. It is an interesting fact that the weight center of the research shifted in the last few years from methods of preparation of nanowires towards methods of fabrication of nanowire based devices.

Electrochemical replication of nanoporous membranes, the so called template method, represents a flexible approach towards the fabrication of semiconductor based nanowires. In this paper we will present our results in using this method in fabricating several types of metal – semiconductor – metal nanowires, with the semiconductor segment from the II – VI group. Besides the morphological and structural characterization, transport properties of such complex nanowires will be presented.


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Presentation: Oral at E-MRS Fall Meeting 2007, Symposium B, by Ionut Marius Enculescu
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 18:22
Revised:   2009-06-07 00:44