ZnO, the wide band gap semiconductor, is a very promising material for blue and UV applications meanwhile the p–type conductivity in ZnO is difficult to obtain routinely. In general, the p-type doping is obtained from the substitution of oxygen atoms by column V elements.

In this study the Nitrogen-doped and Antimony-doped ZnO layers have been grown by metal organic vapour phase epitaxy (MO-VPE) on sapphire and ZnO substrates at high temperature (950 °C) and low pressure conditions (50 torr). Nitrous oxide and diethyl-zinc as the oxygen and zinc precursors have been used. The incorporation of nitrogen and antimony has been obtained from the decomposition of tributhyl-nitrogen and triethyl-antimony molecules respectively. According to the growth parameters, the layers show a flat surface or a structured surface and sometimes with some nano-structurations. The nitrogen and antimony incorporation was checked by secondary ion mass spectroscopy (SIMS), the impurities are ranged from 10¹⁸ to 10²⁰ at/cm^-3. The doped layers were investigated by optical characterisations: Raman scattering and photoluminescence spectroscopy. In N-doped layers we have observed several Raman lines from local vibrational modes related to nitrogen. Low temperature photoluminescence spectra exhibit donor-acceptor pair (DAP) transitions around 3.23 eV on both N-doped and Sb-doped layers. The DAP transitions have been investigated from temperature-dependant or excitation power-dependant experiments.

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1. Surface morphology studies of ZnO layers grown using MOCVD
2. Structural characterizations of ZnO based one-dimensional nanostructures grown by MOCVD
3. Effect of Chlorine doping on electrical and optical properties of ZnO thin films