Diluted magnetic semiconductors (DMS) have become recently the subject of considerable interest as promising materials for spin electronics. In particular, Mn-doped II-VI and III-V DMS is extensively explored both experimentally and theoretically. The control of magnetic anisotropy is proved to be essential in fabricating spintronic devices. In the present communication we propose a theory for single ion anisotropy (SIA) of S-state ions in DMS with the wurtzite structure. For the calculation of the spin Hamiltonian (SH) parameters we start from a realistic p-d model. The model includes the Hamiltonian of isolated S-ion (Coulomb repulsion, spin-orbit coupling and p-d hopping). A canonical Schrieffer-Wolff-like transformation reduces this model to an effective single ion Hamiltonian. The ligand field parameters are expressed in function of ligands coordinates and p-d hybridization. Then, this Hamiltonian is numerically diagonalized and treated by pertubative approach which enable us to obtain explicit analytic formula for SH parameters, a-F and D. The results of the calculation are found to be in good agreement with our EPR measurements on ZnO:Mn thin films and the available EPR data on Mn2+ and Fe3+ for other II-VI compounds (ZnX and CdX, X = S, Se, Te).

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