The crystals were grown by the Bridgman method and contained 3*10¹⁹ at/cm³ of Bromine in the melt. Hall effect measurements were performed under well-defined Cd/Te vapor pressure at ~600-1200 K using the 6 contacts method. Temperature, component vapor pressure and temporal dependencies of specific conductivity, charge carrier density and their mobility were studied.

The electron density ([e^-]) at RT in as-grown samples varied from 10¹⁰ till 10¹⁷ cm^-3 but after heating above 800 K it became essentially higher than in undoped CdTe, sometimes  exceeding 10¹⁸ cm^-3 at T>1100 K. It didn’t depend on the Cd vapor pressure (P_Cd) till 1000 K and increased at higher temperature with P_Cd increasing. In heavily doped samples after heating above 900 K the [e^-] was above 10¹⁷ cm^-3  and constant in a wide temperature range (500-1100 K). The electron mobility in CdTe:Br crystals usually was lower comparing with undoped CdTe due to the high concentration of dopants atoms. It was impossible to reduce the [e^-] sufficiently by P_Cd reducing or quenching. Only the treatment at Te saturation allowed decreasing the [e^-] more than 6 orders of magnitude (at RT). The observed strong self-compensation phenomena are discussed in the framework of the Krogers’ quasichemical point defect theory assuming the presence in the samples of a large quantity of dopant acceptors (Bromine associates with Cd vacancies) and dopant donors (Br_Te).

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