CdTe crystals doping by shallow donors are widely used to produce material for gamma- and X-ray detectors. This is possible due to self-compensation (SC) phenomena, which ensure high resistivity of obtained crystals. SC is well studied in CdTe<In> crystals. But all information concerns room temperature properties, even if the samples were treated by annealing. In this work in situ high temperature PD equilibrium and SC phenomena in CdTe crystals, doped by different quantities of In (10¹⁷-10²⁰ at/cm³), were studied. High temperature Hall effect measurements under well defined Cd/Te pressure up to 1200 K were performed.

At low In content in the samples controlled conductivity was observed. Heating to T>1000 K under small Cd vapor pressure (P_Cd) afterwards resulted in electron density [e^-] decreasing in 1-1.5 orders of magnitude. The electron density became the same as in undoped CdTe. The samples with high In concentration revealed stable and high [e^-], which didn't depend on P_Cd. On the base of obtained results models of point defect concentration on temperature, component pressure and dopant activity were built. Some thermodynamic constants of In introducing into the CdTe lattice were defined also. SC models for temperature dependencies at different P_Cd were calculated.

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