CdTe is a very promising material for photorefractive devices, such as optical memory, holographic real time cameras, optical communication. Usually CdTe, doped by Ge or V, are used for these purposes. CdTe single crystals, grown in Chernivtsi University, ensure the largest gain factors known till now in all semiconductor photorefractives without applied electric field. Similar properties - conductivity of p-type and high resistivity - reveal CdTe<Pb> crystals and they can find an application in non-linear optics devices. But such material was investigated at low temperatures only. It is important to study the CdTe properties at high temperatures, where the point defect structure of semiconductor is formed.

The single crystals were grown by Bridgman technique. Pb concentration in the melt was 5×10¹⁸-5×10¹⁹ at/cm³. Hall effect measurements at 600-1100 K under well defined Te vapor pressure were performed. At 300 K all samples were of p-type conductivity with 40-70 cm²/Vs hole mobility. The dominant charge carriers were controlled by the E_V+0.43 eV level. Under Cd saturation the samples gained n-type conductivity with lower electron concentration comparing to undoped CdTe. Measurements under Te vapour pressure demonstrated hole conductivity up to 600 K. After 900 K the conductivity became electronic. During heating-cooling cycles the p-n transition temperature shifts to higher values. The obtained results are explained using Kröger's quasichemical defect formation theory.

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