In order to be used as γ-detectors, CdTe single crystals have to be of high resistivity and must possess a high level of perfection and be free of linear as well as volume defects.
The present research presents a new method of CdZnTe single crystals growth with natural faceting by vapor transport using a polycrystal ingot as initial source material. Source polycrystal Cd_0,96Zn_0,04Te_1+-δ (δ = 0,0001) or Cd_0,87Zn_0,13Te_0,999 ingots were synthesized by melting together calculated amounts of elementary components
Cd_xZn_1-xTe single crystals were grown in a 35 mm diameter quartz ampoule located in an isothermal medium at 1050-1150 K. The temperature gradient along the ingot was built owing to thermal radiation. By use of a capillary tube the redundant component is removed from the growth zone and deposited in the cold zone. The single crystals growing rate reached as high as 2 cm³/day. As a result, we obtained single crystals with 2,5x2,5x4 cm³ dimensions, constrained by natural faces corresponding to the (110), (100) and (111) planes, the dislocation density being ~10³ cm^-2.
Measuring of the rocking curves half-height width for reflection planes (CuK_α X-radiation) with Miller indices (111), (220), (311), (422) and (331) gave 25.0 s, 17.5 s, 13.6 s, 20.8 s and 13.6 s values respectively. X-ray patterns obtained in CuK_α radiation do not reveal any volume defects or mechanical stresses.
Crystals of both n- and p-type were obtained, carrier concentration being at 300K n =3x10¹⁴/cm³ or p =1,7x10¹⁵/cm³, with carrier mobility of 326 cm²/Vs, 69 cm²/Vs respectively.
Using as source substance a Cd_0,96Zn_0,04Te_1,0001 alloy with 0,2 mol% of Ga₂Te₃ single crystals by vapor transport could be grown. They possess a 2x10⁶ Ohm cm resistivity at 300 K.

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