Laser stimulated p-n junction formation in CdTe

Aliya Baidullaeva 1Peter Feychuk 2O. I. Vlasenko 1P. Mozol 1P. Pobirovsky 1Paul Siffert 3

1. Institute of Semiconductor Physics NAS Ukraine, Kyiv, Ukraine
2. Chernivtsi National University (ChNU), 2 Kotsubinsky Str., Chernivtsi 58012, Ukraine
3. European Materials Research Society (E-MRS), Strasbourg, France


CdTe crystals are promising for their applications in optoelectronic devices, such as solar energy converters, optoelectronic modulators, highly efficient detectors for γ- and X-rays at room temperature.
Usually as-grown undoped CdTe crystals show p-type conductivity. Diffusion and ion implantation of III group elements are commonly used methods for the formation of diode structures. These methods could provide semiconductor doping of high quality, but need high temperature processing. Moreover, the diffusion of impurity on given low depth is difficult. To overcome these disadvantages, we have tested a process of doping p-CdTe with Indium under laser radiation in order to create abrupt In profiles for p-n junctions.
(111) CdTe p-type wafers, grown by the THM method were investigated. Indium was used as a dopant impurity. A thin layer of indium was vapor deposited in vacuum on the Te-side surface of p-CdTe crystal before its irradiation. Samples were irradiated at T=300K with multimode Q-switched ruby laser single pulses with 2x10-8 s duration both in air, and in chamber filled with Ar under 2 atmospheres pressure.
It was shown that the use of laser radiation has the potential for doping and producing shallow p-n junction in CdTe crystals. As opposed to doping during the process of growth the formation of p-n junction under laser doping occurs within short time (2x10-8 s) with predetermined locality both in depth and on the surface of crystals. The doping deposition thickness and procedure of irradiation necessary for creation of shallow p-n junction were optimized. Current-voltage characteristics of p-n junction in CdTe crystals were investigated. These characteristics of the p-n junction show diode properties with reverse current of 35 nA and 1.8 nA at 100V bias for 10 x 10 mm2 and for 3 x 3 mm2 structures respectively.
The mechanisms of shallow p-n junction creation under laser radiation are discussed.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Recent initiatives to create a materials community in Europe
  2. High-temperature electrical properties of CdTe<Pb> crystals under Te saturation
  3. Applications of the II-VI semimagnetic semiconductors
  4. The influence of thermal treatment on the properties of CdTe colloidal nano-solutions stabilized by thioglycolic acid
  5. Is the (Cd,Mn)Te crystal a prospective material for X-ray and γ-ray detectors?
  6. Security control by an innovative X-ray method
  7. Applying advanced solid-state radiation detector technologies for public protection
  8. Intensity dependence of nanostructure formation on surface of CdTe crystals under pulse laser irradiation and their photoconductivity spectra
  9. Radiative electron-hole recombination and degradation processes in thiol-stabilized CdTe nanocrystals
  10. High-temperature behavior of CdTe<Cl> crystals
  11. Cd1-xZnxTe Single Crystals Growth from Vapor Phase
  12. Optical and structural properties of films based on CdHgTe

Presentation: oral at E-MRS Fall Meeting 2004, Symposium F, by Aliya Baidullaeva
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-28 06:49
Revised:   2009-06-08 12:55
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine