To answer the title question - the technology and properties of the (Cd,Mn)Te crystals will be discussed as compared with those of the more commonly used (Cd,Zn)Te crystals.
The composition homogeneity of the large single crystals of the ternary compound seems to be easier to achieve in the case of (Cd,Mn)Te because the segregation coefficient of Mn in CdTe is negligible whith respect to that (approx. 1.4) of Zn
Only 15% of MnTe has to be added to CdTe to reach the best for the detector application value of the energy gap (in the range 1.7 - 2.2 eV), while the necessary amount of ZnTe is over 30%! This is because the composition dependence of the CdTe energy gap is for Mn twice as strong as for Zn. Using a smaller amount of the second cation diminishes many alloying-related problems.
Dopant-free as grown (Cd,Mn)Te crystals are of p-type, which is related to the Cd vacancies acting as acceptors. The number of vacancies can be reduced by the post-growth annealing in the Cd vapours and the high (~ 10¹⁰ Ωcm ) resistivity, required for good detectors, can be obtained by doping with donors.
The technology of the (Cd,Mn)Te crystals, undoped and compensated in the very large range of concentrations, and Cd-annealing of the samples will be discussed. Characterization of the obtained crystals by the measurements of resistivity, photoluminescence and photoconductivity will be described. The behaviour of the preliminary detectors will be shown.

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1. (Cd, Mn)Te Crystals for X and Gamma Radiation Detectors - an Alternative Material to CdTe and (Cd,Zn)Te. 
2. SEM studies of the etched surface of (Cd,Mn)Te
3. Czochralski Growth of Indium Iodide 
4. Hexagonal MnTe with NiAs structure: thermal expansion coefficients and exchange striction
5. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
6. Far-infrared and Raman Spectroscopy of CdTe_0.97Se_0.03(In)
7. Influence of hydrogen on hydrogenated cadmium telluride optical spectra
8. Additional  Phonon Modes related to intrinsic defects in CdHgTe
9. Phonon and vibrational spectra of real crystals obtained using the synchrotron radiation
10. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
11. Preparation of the ZnO substrate surface
12. Recent initiatives to create a materials community in Europe
13. Electrical contacts to semi-insulating (Cd,Mn)Te:V
14. Influence of hydrogen on optical spectra of hydrogenated CdTe
15. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
16. Structure properties of bulk ZnO crystals
17. Material properties limiting the use of cadmium zinc telluride X- and gamma detectors
18. Materials requirements in the group - CdTe, CdZnTe and CdMnTe - and recent advances for X-ray and gamma-ray applications.
19. Applications of the II-VI semimagnetic semiconductors
20. Security control by an innovative X-ray method
21. Gamma spectroscopy with room temperature semiconductor detectors and scintillation probes operating without PMT
22. Applying advanced solid-state radiation detector technologies for public protection
23. Development of portable CdZnTe spectrometers for remote sensing of signatures from nuclear materials
24. Neutron Detection with Cryogenics and Semiconductors
25. The local crystalline structure of ZnCdTe alloys obtained by Far Infrared Synchrotron Radiation measurements
26. Defects induced by oxygen and hydrogen in CdTe crystals
27. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
28. Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF₂ (111) substrates
29. Low-frequency magnons and phonons in hexagonal MnTe
30. HIGH PRESSURE ANNEALING-INDUCED REDUCTION IN DEGREE OF COMPENSATION IN (Zn,Mn)Te CRYSTALS
31. Laser stimulated p-n junction formation in CdTe
32. CVT contactless growth of ZnO crystals
33. High-temperature behavior of CdTe<Cl> crystals
34. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study
35. Differential Reflectivity and Photoemission study of ZnTe and CdTe(110) surface