Electrical contacts to semi-insulating (Cd,Mn)Te:V
|Marta Witkowska-Baran , Andrzej Mycielski , Andrzej J. Szadkowski , Wojciech Kaliszek , Barbara Witkowska|
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
The high-resistivity (Cd,Mn)Te is believed to be suitable to succesfully replace the commonly used (Cd,Zn)Te system as a material for manufacturing large-area X- and γ-ray detectors.
The purpose of our study was to elaborate a method of preparing high quality (Cd,Mn)Te crystal plates as well as a technique of producing good electrical contacts to that material.
(Cd,Mn)Te was grown using the Bridgman method. The crystals were doped with vanadium to the level of 1016 cm-3 . The crystals are twinned in the (111) plane, but by slicing the crystal parallel to the twinning plane we obtained monocrystalline plates of large area (e.g. 30 × 30 mm2), which is essential for application purposes. Proper annealing of those plates in cadmium vapours allowed us to reduce the number of cadmium vacancies forming during the growth process. Due to the vanadium dopant acting as a compensating centre we obtained a semi-insulating material. In order to obtain good contacts to the (Cd,Mn)Te plates we used the method proposed initially for CdTe by D. Rioux . The ZnTe:Sb layers (~1 μm thick) were grown on the epi-ready (Cd,Mn)Te:V plates by the MBE technique. The grown layers were p‑type and formed a good electrical contact to the crystal plates. Finally - a standard technique was used to cover the ZnTe layer by a metal layer. The contacts formed on both the (100) and (111) surfaces of (Cd,Mn)Te were studied. We believe that the contacts to the (111) surface are important for applications.
This work was partially funded by the Polish Ministry of Science and Higher Education
 D. Rioux, D. W. Niles, H. Höchst, J. Appl. Phys. 73, 12 (1993)
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Marta Witkowska-Baran
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-24 17:33 Revised: 2009-06-07 00:44
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