Thermodynamic properties of native defects and their interactions with extrinsic defects including self-compensation, defect reactions and complex formation are studied within quasichemical formalism both at the high temperature annealing and at the cooling down to the room temperature (RT). We shall show that the cooling process significantly influences RT electric properties and the proper thermal treatment can be conveniently used for the optimization of electric properties and preparation of detector grade material. Various defect reactions, which proceed during respective cooling regimes, will be discussed and their effect to RT electric properties will be presented. Special attention will be devoted to defect reactions, which change the electric state of input/output species and allow in some cases the conductivity type conversion or the production of the semi-insulating material. Critical review of present defect models in CdTe will be given.
The defect statistics in CdTe is determined by the Fermi energy, cadmium or tellurium chemical potential and in case of doping by chemical potential of the dopant. In equilibrium with ambient vapor the pressure of one component is used to tune the deviation from stoichiometry (Δ). Both neutral and charged defect densities are calculated solving two balance equations - electric neutrality condition, which ensures the total charge equilibrium, and the dopant balance equation, which fixes dopant density. A cooling, which is sufficiently fast, prevents the sample to reach the equilibrium with external atmosphere and Δ is preserved at the value, which was set by the previous annealing. Nevertheless, the diffusion is sufficiently fast to allow short-range defect transport and reactions within the material. The set of balance equations must be then completed by the Cd (or Te) balance equation, which fixes Δ and allows the assessment of respective chemical potential.

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