Thin film p-Si/CdTe/Cd_0.3Zn_0.7S_0.8Se_0.2 heterostructures were fabricated using an electrochemical deposition method. Nano-granular thin films of CdTe with thickness 50-200 nm were deposited at room temperature on p-Si substrates from an aqueous solution containing CdSO₄ and TeO₂. Electrodepositing of the Cd_0.3Zn_0.7S_0.8Se_0.2 films onto the p-Si/CdTe substrates was carried out at room temperature from aqueous solution containing cadmium (CdCl₂), zinc (ZnCl₂), sodium (Na₂S₂O₃) and selenium (SeO₂ or Na₂Se₂O₃) salts. The deposition potential was controlled at– 0.82 V. The thickness of the films was 0.5 ¸ 1 mm. As ohmic contacts we used Al for the silicon and ZnO for the films Cd_0.3Zn_0.7S_0.8Se_0.2. The active area of heterostructures was 0.4 ¸ 0.8 cm². The electrical and photoelectrical properties of structures were investigated for various regimes of annealing in argon atmosphere. Atomic force microscopy (AFM) was used to evaluate the resulting surface morphology. X-ray diffraction analysis reveals that the heat treatment enhances the recrystallisation and shifts the CdTe peaks towards a smaller lattice parameter. It is established, that films CdTe that are deposited in the space charge region of structures reduce the concentration of defects and increase the device efficiency up to 11%.

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