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prof Mohamed Kechouane

e-mail:
phone: +213-21-247912
fax: +213-21-247344
web:
interest(s):

Affiliation:

Laboratoire de Physique des Matériaux, Faculté de Physique, USTHB

address: BP 32 El Alia Bab Ezzouar, Alger, 16100, Algeria
phone:
fax:
web: http://www.usthb.dz

Participant:

E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

Publications:
  1. Effect of phosphorus incorporation in hydrogenated amorphous silicon
  2. Effect of the oxygen on the optical, structural and electrical properties of ZnF2 thin films prepared by DC reactive sputtering
  3. Effects of boron and phosphorus incorporation in hydrogenated amorphous silicon
  4. Low-temperature deposition of ZnO thin films by DC reactive sputtering at high oxygen partial pressure
  5. Structural, optical and electrical properties of a-Si1-xCx:H films synthesized by DC-magnetron co-sputtering technique



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