ZnO thin films with initial Zn layers were grown on p-type Si (100) by plasma-assisted molecular beam epitaxy (PA-MBE). Before the growth of the ZnO thin films, the initial Zn layers were deposited on the Si substrates for 4 minutes and then annealed at the different substrate temperature ranging from 500 to 700 ^oC in oxygen plasma. The annealing effects of the initial Zn layers on properties of the ZnO thin films have been investigated by room temperature (RT) photoluminescence (PL), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). In the UV and visible range, near-band edge emission (NBEE) at 3.3 eV and trap-state or deep-level emission (DLE) around 1.9 to 2.1 eV were observed. The as-grown sample showed a broad and asymmetric NBEE. The NBEE peaks of the samples with the annealed initial Zn layers (from 500 to 700 ^oC) showed narrower and higher symmetric shape. The PL intensity ratio of the NBEE to DLE for the sample annealed at 500 ^oC was the largest. The XRD rocking curves of all the samples showed the typical peaks such as ZnO (002), Si, and ZnO (004). The ZnO (002) peak intensity of the XRD spectra was relatively dominant. The PL spectra, the XRD spectra, the strain, and the surface morphology for the ZnO thin films were affected by the annealing process.

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1. Structural and optical properties of ZnO epitaxial layers grown on ZnO buffer layers with different interrupts by molecular beam epitaxy
2. Effects of growth interruption of ZnO buffer layer on properties of ZnO epitaxial layer on Si (100)