ZnO is a promising material for use in solar cell applications requiring antireflective coatings and transparent conducting materials in front contacts. Its resistivity can be reduced by appropriate doping with different group III elements, which act as donors, without sacrificing optical transmission. These characteristics makes it one of the most promising and cheap transparent conducting oxides (TCOs).The interface between Si and a TCO like ZnO is a critical part of Si-based solar cells, since the conversion efficiency may be profoundly altered by the presence of recombination centres formed at the interface. We have carried out a thorough analysis using photoelectron spectroscopy (PES) and ultraviolet photoelectron spectroscopy (UPS) of the chemistry of the ZnO:Ga/Si interface formed when a TCO film is deposited by RF magnetron sputtering on a wafer Si solar cell.

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1. SURFACE MORPHOLOGY OF ZnO/ZnS bilayer obtained by Chemical Spray Pyrolysis
2. Comparison of the interfaces ZnO/Si and ZnO:Al/Si by soft X-ray photoemission spectroscopy
3. Iron oxide and oxyhydroxides thin films obtained by electrodeposition
4. Hetereojunction
5. THE CONDUCTION MECHANISM OF Al-DOPED ZnO, AZO, FILMS