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Optical, structural, and magnetic properties of V-implanted ZnO

Chang Oh Kim 1Dong Hee Shin 1Suk-Ho Choi 1Sung Kim 2Robert G Elliman 2Yoon Shon 3

1. Kyung Hee University, Yongin 446-701, Korea, South
2. Australian National University, Canberra, Australia
3. Dongguk University (QSRC), 3-26 Phil-dong, Chung-gu, Seoul 100-715, Korea, South

Abstract

Optical, structural, and magnetic properties of V-implanted ZnO (ZnO:V) have been investigated by photoluminescence (PL), x-ray diffraction (XRD), and superconducting quantum interference devices (SQUID). The ZnO films of 100 nm thickness were implanted with 100 keV V ions to fluences (nV) of 1.0 x 1015, 2.5 x 1015, 5 x 1015, and 1.0 x 1016 cm-2 at room temperature and subsequently annealed at 300 ~ 900 oC for 20 min in an oxygen ambient. Near-band-edge (NBE) PL emission from ZnO:V was observed at ~ 380 nm, irrespective of nV and the annealing temperature (TA), and its intensity increased gradually with increasing nV from 0 to 2.5 x 1015 cm-2, but at nV ≥ 5 x 1015 cm-2, it decreased. The NBE PL intensity of ZnO:V films at TA = 900 oC was almost 6 times enhanced at nV = 2.5 x 1015 cm-2, compared to that of the unimplanted ZnO. The XRD peak of the ZnO:V films with nV = 2.5 x 1015 cm-2 was observed dominantly at ~ 34o and was attributed to the ZnO (002) plane. Only the ZnO (002) peak was identified up to TA = 800 oC, but at TA = 900 oC, additional XRD peak corresponding to V clusters or V oxide phases was also observed. The M-H curves measured at 10 K exhibited strong ferromagnetism at TA = 500 oC for the ZnO:V films with nV = 2.5 x 1015 cm-2. Possible physical mechanisms will be discussed to explain the experimental results.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Suk-Ho Choi
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-09 11:08
Revised:   2009-06-07 00:48