Optical, structural, and magnetic properties of V-implanted ZnO (ZnO:V) have been investigated by photoluminescence (PL), x-ray diffraction (XRD), and superconducting quantum interference devices (SQUID). The ZnO films of 100 nm thickness were implanted with 100 keV V ions to fluences (n_V) of 1.0 x 10¹⁵, 2.5 x 10¹⁵, 5 x 10¹⁵, and 1.0 x 10¹⁶ cm^-2 at room temperature and subsequently annealed at 300 ~ 900 ^oC for 20 min in an oxygen ambient. Near-band-edge (NBE) PL emission from ZnO:V was observed at ~ 380 nm, irrespective of n_V and the annealing temperature (T_A), and its intensity increased gradually with increasing n_V from 0 to 2.5 x 10¹⁵ cm^-2, but at n_V ≥ 5 x 10¹⁵ cm^-2, it decreased. The NBE PL intensity of ZnO:V films at T_A = 900 ^oC was almost 6 times enhanced at n_V = 2.5 x 10¹⁵ cm^-2, compared to that of the unimplanted ZnO. The XRD peak of the ZnO:V films with n_V = 2.5 x 10¹⁵ cm^-2 was observed dominantly at ~ 34^o and was attributed to the ZnO (002) plane. Only the ZnO (002) peak was identified up to T_A = 800 ^oC, but at T_A = 900 ^oC, additional XRD peak corresponding to V clusters or V oxide phases was also observed. The M-H curves measured at 10 K exhibited strong ferromagnetism at T_A = 500 ^oC for the ZnO:V films with n_V = 2.5 x 10¹⁵ cm^-2. Possible physical mechanisms will be discussed to explain the experimental results.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/18305 must be provided.

1. Optical, Structural, and magnetic properties of p-type GaN implanted with Fe⁺ (5 and 10 at %)
2. Structural, Optical, Magnetic Properties, and Anomalous Hall Effect of InMnP:Zn Epilayer