Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 5th, Monday |
|
| 13:30 |
Heterostructures: M. Leszczynski/R. Ruterana - Main Building, room 134 |
| 14:00 |
00:30:00 |
invited oral |
Akihiko Yoshikawa |
Epitaxy Control and Characterization of InN, InN-based Ternary Alloys, and Their MQW-structures |
| 14:30 |
00:30:00 |
invited oral |
David J. Smith |
Determination of concentration, strain and internal electric fields in InN and InGaN quantum well and quantum dot structures |
| 15:00 |
00:30:00 |
invited oral |
Euijoon Yoon |
Ultra-thin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition |
| 15:50 |
Monday Poster Session |
| 15:50 |
#A-1 |
poster |
Zhifeng Wei |
Anomalous Temperature Dependence of Photoluminescence of Self-assembled InGaAsN Quantum Dots |
| 15:50 |
#A-2 |
poster |
Louis F. J. Piper |
InN explained within chemical trends |
| 15:50 |
#A-3 |
poster |
Munise Rakel |
Conduction band anisotropy of InN and GaN studied by synchrotron ellipsometry |
| 15:50 |
#A-4 |
poster |
Bachir Bouhafs |
Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN |
| 15:50 |
#A-5 |
poster |
Hiroshi Miwa |
Scanning near-field optical microscopy (SNOM) analysis of MOVPE InN |
| 15:50 |
#A-6 |
poster |
Marcin Motyka |
Contactless electroreflectance spectroscopy of InN layers grown by MBE |
| 15:50 |
#A-7 |
poster |
Pierre Ruterana |
Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM |
| 15:50 |
#A-8 |
poster |
Takahiro Kobayashi |
A comparative study on MOVPE InN films grown on 3c-SiC/Si(111) and sapphire substrates |
| 15:50 |
#A-9 |
poster |
Akio Yamamoto |
Growth of N-polarity InN by ArF-laser assisted MOVPE |
| 15:50 |
#A-10 |
poster |
Pawel Kempisty |
Mass flow and reaction analysis of the growth of GaN layers by HVPE |
| 15:50 |
#A-11 |
poster |
Christoph Cobet |
Optical properties of InN films and the influence of surface contaminations |
| 15:50 |
#A-12 |
poster |
Oleksandr N. Yefanov |
Investigation of Deformation Fields Anisotropy in Multilayered (In,Ga)As/GaAs Structures with Quantum Wires by HRXRD. |
| 15:50 |
#A-13 |
poster |
Roman Minikayev |
Rietveld refinement for polycrystalline indium nitride |
| 15:50 |
#A-14 |
poster |
Wojciech Paszkowicz |
LATTICE PARAMETERS OF INDIUM NITRIDE IN THE 22-310 K TEMPERATURE RANGE |
September 6th, Tuesday |
|
| 09:00 |
Band Structure I: A. Yoshikawa/D. Alexandrov - Main Building, room 134 |
| 09:00 |
00:30:00 |
invited oral |
Wladek Walukiewicz |
Band Structure and Properties of InN and In-rich In1-xGaxN Alloys |
| 09:30 |
00:15:00 |
oral |
Louis F. J. Piper |
Valence band structure of InN from x-ray photoemission studies |
| 09:45 |
00:15:00 |
oral |
Jebreel M. Khoshman |
Band Gap Energy of a-InN Thin Films |
| 10:00 |
00:30:00 |
invited oral |
Tatiana V. Shubina |
Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 14:00 |
Band Structure II: W. Walukiewicz/T. Shubina - Main Building, room 134 |
| 14:00 |
00:30:00 |
invited oral |
Friedhelm Bechstedt |
Dielectric function of InN: Nonparabolicity and excitonic effects |
| 14:30 |
00:30:00 |
invited oral |
Petra Specht |
Band transitions in the InGaN system |
| 15:00 |
00:30:00 |
invited oral |
Dimiter Alexandrov |
Electron band structure and optical properties of InN and related alloys |
| 15:50 |
Band Structure III: T. Suski/A. Klochikhin - Main Building, room 134 |
| 15:50 |
00:30:00 |
invited oral |
Ruediger Goldhahn |
Optical anisotropy of InN from near-IR to deep-UV |
| 16:20 |
00:30:00 |
invited oral |
Su-Huai Wei |
THEORETICAL INVESTIGATION OF THE InN BAND GAP ANOMALY |
| 16:50 |
Rump Session I: Band Gap and Band Structure of InN - Main Building, room 134 |
September 7th, Wednesday |
|
| 09:00 |
Properties, Optical, Electronic I: R. Goldhahn/T. Veal - Main Building, room 134 |
| 09:00 |
00:30:00 |
invited oral |
Tadeusz Suski |
Localized donor states resonant with the conduction band in InN and GaN |
| 09:30 |
00:15:00 |
oral |
Volker Cimalla |
Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy |
| 09:45 |
00:15:00 |
oral |
Phillip A. Anderson |
Multiple photoluminescence peaks from mixed-phase indium nitride thin films |
| 10:00 |
00:30:00 |
invited oral |
Albert A. Klochikhin |
Acceptor states in photluminescence of n-InN |
| 14:00 |
Properties, Optical, Electronic II: F. Bechstedt/A. Yamamoto - Main Building, room 134 |
| 14:00 |
00:30:00 |
invited oral |
K. Scott A. Butcher |
Stoichiometry related point defects in InN |
| 14:30 |
00:15:00 |
oral |
Evgenia Valcheva |
Recombination processes with and without momentum conservation in degenerate InN |
| 14:45 |
00:15:00 |
oral |
Takashi Inushima |
Superconductivity of InN |
| 15:00 |
00:30:00 |
invited oral |
Tim Veal |
Quantized Electron Accumulation, Inversion Layers and Fermi Level-Stabilization in Indium Nitride |
| 15:50 |
Growth I: E. Yoon/P. Specht - Main Building, room 134 |
| 15:50 |
00:30:00 |
invited oral |
Hiroyuki Naoi |
Growth and properties of InN, InGaN, and InN/InGaN quantum wells |
| 16:20 |
00:15:00 |
oral |
Eleftherios Iliopoulos |
InGaN and InAlN alloys grown in the entire composition range by plasma assisted molecular beam epitaxy |
| 16:35 |
00:30:00 |
invited oral |
Phillip A. Anderson |
RF plasma sources for III-nitrides growth: influence of operating conditions and device geometry on active species production and InN film properties |
| 17:05 |
00:15:00 |
oral |
Emmanouil Dimakis |
Properties of MBE-grown InN (0001) films |
| 17:20 |
00:30:00 |
invited oral |
Massimo Drago |
MOVPE growth of InN on Sapphire |
September 8th, Thursday |
|
| 09:00 |
Growth II: M.A. Poisson/A. Doolittle - Main Building, room 134 |
| 09:00 |
00:30:00 |
invited oral |
Akio Yamamoto |
Inhomogeneities in MOVPE InN |
| 09:30 |
00:30:00 |
invited oral |
Vladislav Y. Malakhov |
InN Polycrystalline Films: Growth, Structure and Optical Characterization |
| 10:00 |
00:30:00 |
invited oral |
Olga Kryliouk |
Single crystalline InN nanorods by H-MOVPE |
| 11:00 |
Structure, Miscellanous: C. Kisielowski/S. Wei - Main Building, room 134 |
| 11:00 |
00:15:00 |
oral |
Rozaliya I. Barabash |
Characterization of chrystallographic properties and defects via X-ray microdiffraction in GaN(0001) layers |
| 11:15 |
00:15:00 |
oral |
Hamid Haratizadeh |
Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells |
| 11:30 |
00:15:00 |
oral |
Andreas Delimitis |
Structural and optical characterization of thick InN epilayers grown on GaN templates by plasma assisted molecular beam epitaxy |
| 11:45 |
00:30:00 |
invited oral |
Zuzanna Lilental-Weber |
Compositional modulation in the InxGa1-xN layers; relation to their optical properties |
| 14:00 |
Properties, Structure I: Z. Liliental/S. Butcher - Main Building, room 134 |
| 14:00 |
00:30:00 |
invited oral |
Colin J. Humphreys |
Does electron microscopy produce In clustering in InGaN? |
| 14:30 |
00:30:00 |
invited oral |
Pierre Ruterana |
Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM |
| 15:00 |
00:30:00 |
invited oral |
Christian Kisielowski |
Quantitative Electron Microscopy of the InN-GaN Ternary Alloy System |
| 15:50 |
Properties, Structure II: D. Smith/H. Naoi - Main Building, room 134 |
| 15:50 |
00:30:00 |
invited oral |
Paweł Dłużewski |
Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs |
| 16:20 |
00:30:00 |
invited oral |
Andreas Rosenauer |
Strain state analysis of InGaN/GaN – sources of error and optimized imaging conditions |
| 16:50 |
Devices: C. Humphreys/T. Inushima - Main Building, room 134 |
| 16:50 |
00:30:00 |
invited oral |
Marie-Antoinette Poisson |
III-Nitrides semiconductor compounds for microwave devices |
| 17:20 |
00:30:00 |
invited oral |
William A. Doolittle |
Indium Nitride: A Material with Photovoltaic Promise and Challenges |
| 17:50 |
Rump Session II: Indium Composition Fluctuations, Devices - Main Building, room 134 |
| 20:00 |
Symposium Reception |
