Nanomaterials are experiencing a rapid development in recent years due to their exciting potential applications in different areas. InN has been investigated intensively as a constituent of Ga_xIn_1-xN and Al_xIn_1-xN which has been used as active layer in optoelectronic and electronic devices for over a decade. Although InN itself is still less studied material compare to GaN and AlN, the interest in the InN has been increased remarkably. The optical characterization of improved wurtzite InN crystals, although still a subject of debate, has a reported band gap in the range 0.65 to 0.9 eV. This band gap energy is considerably lower than the previously accepted value (Eg = 1.9 eV), and thus some additional applications of InN, such as solar cell and infrared laser diode, are possible. The addition of Ga (Eg = 3.4 eV) makes it possible to create a band gap range of 0.7 to 3.4 eV, which covers virtually the entire solar spectrum.

InN nanorods were grown by H-MOVPE technique. This technique is promising for the development of high efficiency III-Nitrides-based nanosize optoelectronic and electronic devices. Growth of InN using MOVPE has several challenges. The growth temperature is limited to the range of 450~650^C because of the high vapor pressure of nitrogen over InN and low dissociation rate of NH₃. A high V/III ratio (>10⁴) is usually required to prevent In droplet formation at growth temperature. The basic growth parameters, such as growth temperature, V/III and HCl/TMI ratios, and the growth mechanisms were investigated. A novel method was proposed to prevent In droplets formation. Equilibrium thermodynamic calculations of the In-Ga-N-Cl-H system, reaction pathways studies are complemented by experimental work. A wide range of characterization techniques, such as: XRD, AFM, SEM/EDS, TEM, AES, XPS, and PL were employed in this study.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/3794 must be provided.

1. Growth and Characterization of GaN Epilayers on Si Substrates