We have previously reported [1] that a single-crystalline wurtzite InN is grown on a 3c-SiC/Si(111) template, which is formed by the carbon (C⁺)-ion implantation into Si(111) followed by the annealing at a high temperature. However, the quality of InN is inferior to that grown on sapphire. In this paper, InN films are grown on 3c-SiC/Si(111) templates nitrided just before the buffer growth, and their properties are found to be improved to the level for InN films grown on sapphire substrates. The procedures to make 3c-SiC/Si(111) templates was reported elsewhere [1]. MOVPE growth of InN is performed at 600ºC with a GaN buffer layer grown at 550ºC. Just before the GaN buffer growth, a 3c-SiC/Si(111) template is nitrided at 900ºC for 30 min. It is found that the GaN buffer layer grown on the nitrided template is very uniform, while the buffer grown on an un-nitrided template shows the island growth. The uniform GaN buffer growth is due to the improved wetting of GaN layer on the 3c-SiC/Si(111) template. No significant difference is found surface morphologies between InN films grown on the template and those on a sapphire substrate. Both films grown on the template and the sapphire show an intense photoluminescence with peak energy of 0.7eV at room temperature. The carrier concentration and Hall mobility of the InN films grown on the template are 7.6×10¹⁸ cm^-3 and 630 cm²/Vs, respectively. These data are comparable to those for MOVPE InN grown on the sapphire (6.5×10¹⁸ cm^-3 and 870 cm²/Vs) and for plasma-assisted MBE films grown on Si substrates (6.8×10¹⁸ cm^-3, 690 cm²/Vs) [2]. Thus, the nitridation process of the 3c-SiC/Si(111) template is effective to obtain high-quality InN film. The 3c-SiC/Si(111) wafer will open up a variety of device application. [1] A. Yamamoto et al., Phys. Stat. Sol. (c) 2, 2281 (2005). [2] H. Ahn et al., Appl. Phys. Lett. 86, 201905 (2005).

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