Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 5th, Monday |
|
| 14:00 |
00:30:00 |
invited oral |
Joerg Neugebauer |
Ab initio based multiscale simulations of dislocations in GaN |
| 14:30 |
00:15:00 |
oral |
Imad Belabbas |
Ab-initio tight-binding study of the core structures of the c edge dislocation in wurtzite GaN |
| 14:45 |
00:15:00 |
oral |
Joseph Kioseoglou |
Partial dislocation core distribution in GaN using high resolution transmission electron microscopy |
| 15:00 |
00:15:00 |
oral |
Gerard Nouet |
The atomic configuration of tilt grain boundaries around <0001> in GaN |
September 6th, Tuesday |
|
| 09:15 |
00:15:00 |
oral |
Florence Gloux |
Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications |
| 09:30 |
00:15:00 |
oral |
Eleftherios Iliopoulos |
Biaxial strain and Poisson ratio in InN films grown heteroepitaxially on GaN(0001) by plasma assisted molecular beam epitaxy |
| 09:45 |
00:15:00 |
oral |
Zhe C. Feng |
Properties of the CdTe/InSb Interface Studied by Optical and Surface Analytical Techniques |
| 10:00 |
00:15:00 |
oral |
Pierre Ruterana |
Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers |
| 14:00 |
00:30:00 |
invited oral |
Isabelle Devos |
Interfaces between a polar high-k perovskite and silicon |
| 14:30 |
00:15:00 |
oral |
S. J. Wang |
Band alignment at metal-gate/high-k/semiconductor interfaces |
| 14:45 |
00:15:00 |
oral |
Patrick S. Lysaght |
Spectroscopic analysis of thin HfO2 and HfSiOx gate dielectric thin films exposed to NH3 anneal processing |
| 15:00 |
00:15:00 |
oral |
Kunyuan Gao |
The interface of atomic layer deposited Al2O3 on silicon |
| 15:15 |
00:15:00 |
oral |
Michał Ćwil |
Si-oxide and Si-oxynitride interfaces analysed by ultra-low energy SIMS |
| 15:50 |
00:30:00 |
invited oral |
Kathrin Dorr |
Strain and charge modulation in multiferroic manganite - titanate film systems |
| 16:20 |
00:15:00 |
invited oral |
Jean-Luc Maurice |
Chemical bonding and electronic structure at hetero-interfaces: the case of perovskite oxides |
| 16:35 |
00:15:00 |
oral |
Kris J. Hameeuw |
The influence of defects on the surface behavior of TiO2 |
| 16:50 |
00:15:00 |
oral |
Alexander Axelevitch |
Electrical Transport Mechanism in VO2 Thin Films |
| 17:05 |
00:15:00 |
oral |
Mohammad R. Benam |
First principle calculation of the effect of IIIB transition metals impurities on the energy gap of α-Al2O3 |
September 7th, Wednesday |
|
| 09:00 |
00:15:00 |
oral |
Wojciech Szuszkiewicz |
Promising high quality short period Fe/Fe-N multilayers deposited by the sputtering |
| 09:15 |
00:15:00 |
oral |
Jyotsna Dutta Majumdar |
Laser assisted fabrication of Co on Ti for bio-implant application |
| 09:30 |
00:15:00 |
oral |
Paweł Dłużewski |
A hybrid atomistic-continuum finite element modelling of locally disordered crystalline structure |
| 09:45 |
00:15:00 |
oral |
Witold Łojkowski |
Prediction of degree of localisation of misfit dislocation cores in intercrystalline interfaces based on interfacial adhesion |
| 10:00 |
00:15:00 |
oral |
Syamak Hossein Nedjad |
High resolution transmission electron microscopy study on the nano-scale twining of θ-NiMn precipitates in Fe-Ni-Mn maraging alloy |
| 14:00 |
00:15:00 |
oral |
Horia Alexandru |
INTERFACE KINETIC IN CRYSTAL GROWTH FROM SOLUTIONS |
| 14:15 |
00:15:00 |
oral |
Ingrida Bruzaite |
Deposition of nanostructured thallium sulfide layers on organic and inorganic surfaces in a solution of higher polythionic acid |
| 14:30 |
00:15:00 |
oral |
Sonia De Angelis |
IN SITU ETCHING TREATMENTS OF EPITAXIAL LAYER BY USING DIFFERENT GAS COMPOSITION FOR MORPHOLOGICAL QUALITY IMPROVEMENT OF THE SURFACES. |
| 14:45 |
00:15:00 |
oral |
Emilia V. Pecheva |
Patterning of Surfaces by Polysilicon for Inducing Hydroxyapatite Growth by Laser-Liquid-Solid Interaction |
