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Florence Gloux

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Affiliation:

SIFCOM, UMR6176, CNRS-ENSICAEN

address: 6 Bld Maréchal Juin, Caen, 14050, France
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Participant:

E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:
E-MRS Fall Meeting 2005

Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications

Publications:

  1. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM

  2. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications



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