No.
|
Presenting person
|
Title
|
F-1 |
Hamad A. Albrithen |
Scanning Tunneling Microscopoy and surface Simulation of c-GaN(001)-4x1 Ga Tetramer Reconstruction |
F-2 |
Aurel V. Andrei |
SURFACE PROPERTIES OF CARBONIC THIN FILMS PREPARED BY ELECTROCHEMICAL DEPOSITION |
F-3 |
Bere Antoine |
Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries |
F-5 |
Katya M. Borysovska |
The size effect in strength and fracture toughness of deformation origin submicro- and nanomaterials. |
F-6 |
Renata Butkute |
STUDY OF p-n JUNCTIONS BASED ON LANTHANUM MANGANITES |
F-7 |
Khian-Hooi Chew |
Intrinsic Ferroelectric Hysteresis Behaviors for Heterostructures |
F-8 |
Jerzy Ciosek |
Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si |
F-9 |
Vitalij G. Deibuk |
Atomic ordering in GeSn and SiSn advanced semiconductor alloys |
F-10 |
George P. Dimitrakopulos |
Structural properties of quaternary InAlGaN MQWs grown by plasma-assisted MBE |
F-11 |
Jaroslaw Domaradzki |
Electrical properties of nanocrystalline HfTiO4 gate insulator |
F-12 |
Jyotsna Dutta Majumdar |
Laser Composite Surfacing of Stainless Steel with SiC |
F-13 |
Alexander K. Fedotov |
Quantum-chemical simulation of electrically active complexes at silicon grain boundaries |
F-14 |
Jerzy Gronkowski |
X-ray high-resolution diffraction study of GaInAs and GaAsP grown by a modified Czochralski method |
F-15 |
Jerzy Gronkowski |
X-ray diffuse scattering study of defects in α-sapphire |
F-16 |
Yazid Hadjar |
INTERFACIAL REACTIONS OF TANTALUM THIN LAYER ON HIGH STEEL SUBSTRATE |
F-17 |
Weronika Izydorczyk |
A theoretical analysis of the electronic properties of tin dioxide surface |
F-18 |
Theodoros Karakostas |
Study of partial dislocations in wurtzite GaN using gradient elasticity |
F-19 |
Fares Khalfallah |
Study of interfacial processes between tungsten thin layer and steel substrate |
F-20 |
Magdalena Kowalewska |
Nanocrystalline nickel surface layers produced electrochemically and their corrosion resistance |
F-21 |
Mykola M. Krupa |
THE PHOTON PRESSURE EFFECT AND CHANGE OF MAGNETIC-OPTIC CHARACTERISTICS OF MULTILAYERED NANOFILMS |
F-23 |
Dmitry Mogilyanski |
Evaluation of average domain size and microstrain in silicides by the Williamson-Hall method |
F-24 |
Lazhar Mohammedi |
Effect of annealing treatment to improve TiC coating surface properties |
F-25 |
Hossein Moradi |
Oscillation phenomenon of transition temperatures in Fe/V/Fe superlattice |
F-26 |
Yoshihiko Oke |
Formation of Aluminum Silicate Film on Steel in Granite-Copper-Dry steam Reaction System |
F-27 |
A J. Nikitin |
Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy |
F-28 |
Kamila Orlinska |
Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure. |
F-29 |
Igor P. Ostrovskii |
INVESTIGATION OF Si WIRE TRANSMISSION |
F-30 |
Sergey V. Ovsyannikov |
Raman spectra of misfit layer semiconductor structure (PbS)0.59TiS2 under variation of laser power |
F-31 |
Kazunari Ozasa |
Surface modification/oxidation of GaAs in electrolytes for cell-cultivating bio-sensing devices |
F-32 |
Ioannis Panagiotopoulos |
Weak ferromagnetism in CoO and exchange biasing of CoPt in core-shell nanoparticles |
F-33 |
Vytautas Petrauskas |
Simulation of grain boundaries resistance in two-phase thin films of lanthanum manganites |
F-34 |
Ayache Rachid |
STRUCTURAL AND OPTICAL PROPERTIERS OF IRON SILICIDE FORMED BY ION BEAM MIXING |
F-35 |
Maria Luisa Saladino |
NANOMETRIC SEMICONDUCTOR PARTICLES IN MESOPOROUS SILICA: SYNTHESIS AND CHARACTERIZATION |
F-36 |
Kateryna L. Vinnichenko |
Surface morphology and IR optical properties modification of Co-based amorphous metallic alloys during initial stages of crystallization |
F-37 |
Katarzyna WIERZBOWSKA |
Studies of gas sensing, electrical and chemical properties of n-InP epitaxial surfaces |
F-38 |
Wojciech Wierzchowski |
Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration |
F-39 |
Mariusz A. Wojcik |
Discrete State Analysis for Elaboration of the Steering Model with Properties of Nanostructure |
F-40 |
Abdelaziz Lakdja |
First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN |
F-42 |
Valeriy V. Kidalov |
Raman spectroscopy and morphology investigation of porous GaAs |
F-43 |
Akos Nemcsics |
Behaviour of RHEED Oscillation during LT-GaAs Growth |