Scanning tunneling microscopy images of c-GaN(001)-4×1 acquired at both positive and negative sample biases show that the surface consists of "tetramer" rows aligned along [110] with a spacing along [1-10] of 12.8 Å, or 4-atomic spacings. Dual-bias imaging indicates a shift of the corrugation maximum position by 180^o as the sample bias changes sign. Simulated images of the surface reconstruction based on the 4×1 linear tetramer model by Neugabauer et al.,⁽¹⁾ confirm the STM data, showing the occupied states peak at the middle of the tetramer and the unoccupied states peak between tetramers. Scanning tunneling spectroscopy also shows the semi-insulating nature of the 4×1 reconstruction, having a surface gap of 1.3 ± 0.1 eV, as also predicted by theory. Higher Ga coverage on the surface shows a variety of Ga-adatom reconstruction.

⁽¹⁾ Neugebauer et al., Phys. Rev. Lett. 80, 3097(1998)

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