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Investigation of the Semiconducting ScN and its Alloy ScMnN Grown by Radio Frequency Molecular Beam Epitaxy

Hamad A. Albrithen 1,2Haiqiang Yang 2Arthur R. Smith 2Daniel Gall 3

1. King Saud University (KSU), P.O. Box 2455, Riyadh 11451, Saudi Arabia
2. Ohio University (OU), Dept. of Physics & Astronomy, Athens, OH 45701, United States
3. Rensselaer Polytechnic Institute (RPI), 110 - 8th St., MRC-218, Troy, NY 12180, United States

Abstract

ScN films have been grown on MgO(001) substrates using rf MBE. Both reflection high energy electron diffraction and x-ray diffraction confirm the (001) orientation of the films. Scanning tunneling microscopy shows only 1×1 surface reconstruction. Optical absorption results indicate a direct transition at 2.15 eV and a sub-transition with an indirect behavior. Scanning tunneling spectroscopy of ScN surfaces confirms the existence of the indirect transition with Eg of 0.9 ± 0.1 eV. The ScN(001) films on MgO(001) have been used as substrates to grow ScMnN alloys. The incorporation of the Mn into ScN has been studied as a function of the growth temperature. Structural measurements indicate the face-centered tetragonal rocksalt-type crystal structure with Sc and Mn cations and N anions. In addition to the solute incorporation into the lattice, atomic force microscopy images show that the surface of the alloy grown at T ≤ 518 oC contains dot-like features, indicating surface accumulation. The areal dot density is found to decrease as the growth temperature increases, whereas the Mn incorporation increases at 518 oC. Moreover, growth at 612 oC leads to increased desorption rate, resulting in less Mn incorporation, suggesting nearly optimized growth at T = 518 oC. The alloy is found to have lattice parameters which depends on the Mn/(Mn+Sc) bulk ratio; the lattice constants follow Vegard's law depending on the Mn bulk fraction and the lattice constants of ScN and theta-MnN

 

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium E, by Hamad A. Albrithen
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-04-16 16:44
Revised:   2009-06-07 00:44