The structure of chemical vapor deposited (CVD) WSi2 in a multilayered configuration of Si/SiO2/poly-Si/WSi2/poly-Si was analyzed by X-ray diffraction (XRD). Individual layers of this multilayered structure were deposited sequentially on separate wafers and the changes occurring in WSi2 at each stage of the fabrication process were determined by XRD in the as deposited and annealed conditions. XRD line broadening was used to construct the Williamson-Hall (WH) plots. As a first approach to get preparatory information reflections from all the planes observed by the XRD analysis were used to evaluate by the WH technique the mean domain size and the microstrain, respectively. Next, planes of crystallographic families of WSi2 were applied for two cases, a partially and fully crystallized multilayered films, to construct WH plots. When the film is well annealed with small or no anisotropy using planes of a family and all the plains to evaluate the strain and the domain size will provide almost the same values. This technique is used for the first time to illustrate that the WH method can be applied for simultaneous grain size and microstrain evaluation for silicide films also.

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