In this work, we present the results of growth and investigation of p-n diode structures based on hole-doped lanthanum manganite films. High crystalline quality p-type La_2/3A_1/3MnO₃ (A = Ba, Ca and Ce) thin films were grown heteroepitaxially by pulsed laser deposition and magnetron sputtering onto conductive n-type SrTiO₃:Nb (STON) substrates. X-ray diffraction measurements demonstrated perfect crystalline structure of the prepared LBMO and LCaMO films, while traces of CeO₂ as a secondary phase have been indicated for the LCeMO films. Resistance versus temperature curves measured for the films with current in-plane geometry were compared to zero field temperature-dependent junction resistance of the p-n structures. The current-voltage characteristics of all the structures exhibited a rectifying behaviour similar to p-n diode with the characteristic barrier voltage in a case of forward bias increasing gradually from about 0.25 V at 300 K to 0.8 V at 78 K. Special attention was focussed on a comparative study of nonlinear current-voltage characteristics, magnetoresistance and photoconductivity of the prepared diode structures. Various heterostructures were annealed at different temperatures under various oxygen pressure conditions. The observed thermal instability of the LCaMO/STON and LCeMO/STON interfaces was associated with formation of high resistance region (tunnel barrier) due to a diffusion of oxygen ions under strong internal electrical field and possible phase separation in the manganite films at the interface.

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2. Electrical and magnetic properties of p-n diode structures based on lanthanum manganites and Nb-doped SrTiO₃
3. Magnetoresistance of polycrystalline LCMO films in microwave magnetic field
4. Electroresistance and magnetoresistance of polycrystalline La_0.67Ca_0.33MnO₃ films
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6. Phase separation and microwave response of epitaxial and polycrystalline manganite films
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