There is increasing interest in p-n junctions formed between hole-doped manganite films and conducting n-type SrTiO₃<Nb> (STON). In this work, high quality La_2/3Ba_1/3MnO₃ (LBMO), La_2/3Ca_1/3MnO₃ (LCaMO) and La_2/3Ce_1/3MnO₃ (LCeMO) thin films were grown in-situ at 750°C on Nb 0.1 wt % doped conducting STON substrates by pulsed laser deposition and dc magnetron sputtering. Our attempts were undertaken to elucidate a role of dopant element (Ba, Ca and Ce), deposition conditions and possible lattice mismatch at the interface on electrical and magnetic properties of the heterostructures. Current perpendicular to plane geometry was used to investigate the junction resistance, magnetoresistance, the current-voltage (I-U) and capacitance-voltage (C-U) characteristics of the prepared LBMO/STON, LCaMO/STON and LCeMO/STON heterostructures. Asymmetric I-U relations measured at T=78÷300 K for all the heterostructures including LCeMO/STON certified hole doping of the films. The characteristic values of diffusion voltage, corresponding to a steep current increase at a forward bias have been estimated. Magnetoresistance and magnetic field-dependent C-U characteristics were measured at various temperatures to model charge distribution in the vicinity of the p-n junctions. It was found in this work that the effect of epitaxial strain on band gap of the manganites (LCaMO/STON) as well as enhanced phase separation phenomenon at the (LCeMO/STON) interface influence strongly nonlinear I-U characteristics of the heterojunctions. Microstructure of the manganite films, possible strains and oxygen diffusion in the interface region were found to be of key importance for the controlled fabrication of the manganite heterostructures.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/8019 must be provided.

1. Water absorption by epitaxial LaNiO_3-x thin films
2. Synthesis and electrical properties of La-Pr-Mn-O thin films and heterostructures
3. Magnetoresistance of polycrystalline LCMO films in microwave magnetic field
4. Electroresistance and magnetoresistance of polycrystalline La_0.67Ca_0.33MnO₃ films
5. STUDY OF p-n JUNCTIONS BASED ON LANTHANUM MANGANITES
6. Growth and investigation of oxide heterostructures containing half-metallic Fe₃O₄
7. Electroresistance of La-Ca-MnO thin films