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Electroresistance of La-Ca-MnO thin films
|Saulius Balevicius 1, Fiodoras Anisimovas 1, Piotr Cimmperman 1, Oleg Kiprijanovič 1, Jonas Parseliunas 1, Voitech Stankevic 1, NERIJA ZURAUSKIENE 1, Larry L. Altgilbers 2|
1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
Recently, interest in the influence of electrical fields on the resistance of manganites had increased. It has been demonstrated that dc currents induce strong resistance decrease in Pr0.7Ca0.3MnO3 and La0.82Ca0.18MnO3 single crystals. It was observed that pulsed electric fields also change the resistance of thin La0.67Ca0.33MnO3 films. However, the reasons for the origin of this electroresistance (ER) phenomenon are still unclear. In this paper, we present experimental results demonstrating that the main reason for the appearance of this ER in thin manganite films is the existence of ferromagnetic tunnel junctions located at intergranular regions in the polycrystalline films.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium D, by NERIJA ZURAUSKIENE
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-09 09:11 Revised: 2009-06-08 12:55