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Synthesis and electrical properties of La-Pr-Mn-O thin films and heterostructures

Renata Butkute 1Fiodoras Anisimovas 1Antanas K. Oginskis 1Angele Steikuniene 1Jelena Devenson 1Bonifacas Vengalis 1,2

1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
2. Vilnius Gediminas Technical University, Sauletekio al. 11, Vilnius LT-2040, Lithuania


Perovskite manganites are widely investigated for their huge magnetoresistance and many interesting properties. Hole-doping is usually achieved in the La1-xAxMnO3 compounds by substituting a bivalent cation such as Ca, Ba or Sr at a rare earth site. During the last few years, there was increasing interest in electronically doped manganites prepared by partial replacing La by a tetravalent Ce, Te, Zr as well as mixed valence Pr ions. Such electro-doped system could be very promising for fabrication of p-n junctions in novel spintronics devices. Here we report on the synthesis and study of both La0.7Pr0.3MnO3 (LPMO) ceramic samples and thin films and related heterostructures composed of LPMO and p-type La2/3Ca1/3MnO3 (LCMO). Ceramic LPMO samples were prepared by a conventional solid state reaction technique. Thin LPMO films and LPMO/LCMO heterostructures were grown on lattice-matched perovskite SrTiO3, NdGaO3 substrates by pulsed laser deposition. Electron-doping has been indicated for LPMO ceramic samples and thin films from thermopower data. Both LPMO ceramics and thin films exhibited resistivity of 0.1 Ωcm at 300 K and semiconductor-like behaviour. Meanwhile, LPMO/LCMO interface resistance showed an anomalous peak at 185 K. The heterostructures exhibited nonlinear current-voltage characteristics. Series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on electrical, magnetic and optical properties of LPMO material and the heterostructures.


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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium K, by Renata Butkute
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-16 07:45
Revised:   2009-06-07 00:44