InGaN and InAlN ternary alloy films, spanning the entire composition range, were grown successfully by radiofrequency plasma assisted molecular beam epitaxy and their properties were investigated by high resolution x-ray diffraction (HR-XRD), photoluminescence (PL), optical transmission and reflection spectroscopies.
Phase separation was fully suppressed kinetically in the RF-MBE grown films. XRD spectra exhibited well defined, narrow single diffraction peaks in all cases. However, growth of high structural quality thick films proved difficult for the case of InAlN with compositions close to 50% AlN.
In the case of InGaN films the determined in-plane biaxial strain exhibited a change of sign, from positive (compressive) to negative (tensile) for compositions larger than 60% InN and reached the value of 2.6x10^-3 for 90% InN, a value close to the one measured for InN films grown under similar conditions.
Optical bandgap data of InGaN films were fitted well in the entire composition range with a constant value of bowing coefficient, equal to 2.4 eV. On the other hand, InAlN exhibited a dependence of the bowing coefficient on the AlN composition. In both cases the results were extrapolated to an InN bandgap between 0.9 and 1.0 eV, which is higher than the 0.7 to 0.8 eV value of the photoluminescence observed in our InN samples.

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