There have been many attempts towards the fabrication of p-type transparent oxides since the discovery of the first p-type transparent CuAlO₂ by Kawazoe et al. in 1997. The research had been focused on investigating the properties of these p-type oxides for realizing novel electronic and light emitting or light detecting devices. These devices either utilize both n-type and p-type transparent oxides for forming the p/n junction thus creating transparent devices, or make use of one type (n- or p-) of these transparent oxides on conventional semiconductors like Si and GaAs, leading to devices with unique properties.

In this investigation we report on the properties of p-SrCu₂O₂ (SCO) films on n-Si wafers and the resulting p/n junction. The SCO films were fabricated by pulsed laser deposition (PLD) from a SCO target on UV-grade fused silica and Si substrates and their properties (structural, electrical and optical) were investigated as a function of PLD parameters like substrate temperature (300-600^oC) and oxygen pressure (10^-2-10^-5mbar). All SCO films were shown to be p-type semiconductors, with a carrier density in the order of 10¹⁴ – 10¹⁶ cm^-3 and resistivity in the order of 300 Ωcm. Their transparency reaches 80%. Post-deposition annealing in O₂ environment reduced resistivity from 293 Ωcm to 60 Ωcm. The properties of the p-SCO/n-Si diodes were investigated using I-V, C-V and DLTS measurements and the use of SCO/Si heterostructure for electronic as well as optoelectronic applications will be addressed.

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