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The effect of PLD deposition parameters on the properties of p-SrCu2O2/n-Si diodes
|Evie L. Papadopoulou 1, Dimitris Louloudakis 3, Maria Varda 1, Maria Kayambaki 3, Maria G. Androulidaki 4, Guido Huyberechts 2, Elias Aperathitis 3|
1. IESL, FORTH, P.O. Box 1527, Vassilika Vouton, Heraklion 71110, Greece
There have been many attempts towards the fabrication of p-type transparent oxides since the discovery of the first p-type transparent CuAlO2 by Kawazoe et al. in 1997. The research had been focused on investigating the properties of these p-type oxides for realizing novel electronic and light emitting or light detecting devices. These devices either utilize both n-type and p-type transparent oxides for forming the p/n junction thus creating transparent devices, or make use of one type (n- or p-) of these transparent oxides on conventional semiconductors like Si and GaAs, leading to devices with unique properties.
In this investigation we report on the properties of p-SrCu2O2 (SCO) films on n-Si wafers and the resulting p/n junction. The SCO films were fabricated by pulsed laser deposition (PLD) from a SCO target on UV-grade fused silica and Si substrates and their properties (structural, electrical and optical) were investigated as a function of PLD parameters like substrate temperature (300-600oC) and oxygen pressure (10-2-10-5mbar). All SCO films were shown to be p-type semiconductors, with a carrier density in the order of 1014 – 1016 cm-3 and resistivity in the order of 300 Ωcm. Their transparency reaches 80%. Post-deposition annealing in O2 environment reduced resistivity from 293 Ωcm to 60 Ωcm. The properties of the p-SCO/n-Si diodes were investigated using I-V, C-V and DLTS measurements and the use of SCO/Si heterostructure for electronic as well as optoelectronic applications will be addressed.
Presentation: Oral at E-MRS Fall Meeting 2007, Symposium H, by Evie L. Papadopoulou
See On-line Journal of E-MRS Fall Meeting 2007
Submitted: 2007-05-21 16:08 Revised: 2009-06-07 00:44