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The effect of PLD deposition parameters on the properties of p-SrCu2O2/n-Si diodes

Evie L. Papadopoulou 1Dimitris Louloudakis 3Maria Varda 1Maria Kayambaki 3Maria G. Androulidaki 4Guido Huyberechts 2Elias Aperathitis 3

1. IESL, FORTH, P.O. Box 1527, Vassilika Vouton, Heraklion 71110, Greece
2. Umicore Group Research and Development, Kasteelstraat 7 B-2250, Olen B-2250, Belgium
3. Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1527, 71110 Heraklion, Crete, Greece, P.O. Box 1527, Heraklion 71110, Greece
4. Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, and University of Crete, Physics Department (MRG), Heraklion 71110, Greece


There have been many attempts towards the fabrication of p-type transparent oxides since the discovery of the first p-type transparent CuAlO2 by Kawazoe et al. in 1997. The research had been focused on investigating the properties of these p-type oxides for realizing novel electronic and light emitting or light detecting devices. These devices either utilize both n-type and p-type transparent oxides for forming the p/n junction thus creating transparent devices, or make use of one type (n- or p-) of these transparent oxides on conventional semiconductors like Si and GaAs, leading to devices with unique properties.

In this investigation we report on the properties of p-SrCu2O2 (SCO) films on n-Si wafers and the resulting p/n junction. The SCO films were fabricated by pulsed laser deposition (PLD) from a SCO target on UV-grade fused silica and Si substrates and their properties (structural, electrical and optical) were investigated as a function of PLD parameters like substrate temperature (300-600oC) and oxygen pressure (10-2-10-5mbar). All SCO films were shown to be p-type semiconductors, with a carrier density in the order of 1014 – 1016 cm-3 and resistivity in the order of 300 Ωcm. Their transparency reaches 80%. Post-deposition annealing in O2 environment reduced resistivity from 293 Ωcm to 60 Ωcm. The properties of the p-SCO/n-Si diodes were investigated using I-V, C-V and DLTS measurements and the use of SCO/Si heterostructure for electronic as well as optoelectronic applications will be addressed.


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Presentation: Oral at E-MRS Fall Meeting 2007, Symposium H, by Evie L. Papadopoulou
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-21 16:08
Revised:   2009-06-07 00:44