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Undoped and Al-doped ZnO films with tuned properties by pulsed laser deposition
|Evie L. Papadopoulou 1, Maria Varda 1, Kostas Kouroupis-Agalou 1, Maria G. Androulidaki 2, Ekaterina Chikoidze 3, Guido Huyberechts 6, Mircea Modreanu 4, Elias Aperathitis 5|
1. IESL, FORTH, P.O. Box 1527, Vassilika Vouton, Heraklion 71110, Greece
Zinc oxide (ZnO) has been the focus of intense investigation due to the unique properties it possesses. It is a transparent, wide band gap semiconductor (Eg~3.4eV) with high exciton binding energy (~60 meV). Its conductivity, if properly doped, approaches the high value of the widely used n-type indium-tin-oxide (ITO), and if it could also be reproducibly of p-type, ZnO would be the ideal material for many emerging transparent optoelectronic applications.
Presentation: Oral at E-MRS Fall Meeting 2007, Symposium H, by Evie L. Papadopoulou
See On-line Journal of E-MRS Fall Meeting 2007
Submitted: 2007-05-21 11:04 Revised: 2009-06-07 00:44