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Study of the growth conditions of SrCu2O2 thin films deposited by injection MOCVD
|Jean-Luc Deschanvres 1, Carmen Jimenez 1, Afzal Khan 1, Cyril Millon , Herve Roussel , Bernard Servet , Olivier Durand 2, Mircea Modreanu 3|
1. INPG, Laboratoire des Materiaux et du Genie Physique (LMGP), BP 46, Grenoble 38402, France
Divalent ion in a copper oxide matrix M2+Cu2O2 are intensively studied for the application field of p-type transparent conductive oxide in order to achieve transparent electronic devices. In this paper, we have studied the SrCu2O2 (SCO) growth conditions by means of an injection-MOCVD apparatus. Few works have been realized by MOCVD despite its high facility to prepare different ratio of cation. The precursors for this study were strontium and copper tetramethylheptadionate and the deposition temperature has been ranging from 480°C to 570°C. For these temperatures, FTIR and XRD analyses have shown that the films were composed of a mixture of copper oxide (CuO) and strontium carbonate. This later compound is due to the low deposition temperature. So to achieve the SCO compounds, two kinds of annealing have been studied: the ex-situ Rapid Thermal Process (RTP) and the ex situ conventional annealing. The ability to obtain the pure SCO phase with the different annealing has been analyzed related to the film composition. For the RTP, the atmosphere was Ar with or without O2 . Without O2, the annealing is too reductive and metallic copper appears on the surface of the annealed films. Whereas an O2 partial pressure is enough to burn all the carbonate and make the crystallization of Sr3Cu5O8+z phase as observed by FTIR and XRD measurements. Then, after a final pure Ar RTP, the SCO phase is obtained. The structural and electrical properties of the annealed films are discussed related to the deposition conditions, the film compositions and the annealing conditions.
Presentation: Oral at E-MRS Fall Meeting 2007, Symposium H, by Jean-Luc Deschanvres
See On-line Journal of E-MRS Fall Meeting 2007
Submitted: 2007-06-23 14:15 Revised: 2009-06-07 00:44