Comparable study of ZnInO & ZnN as channel layers for transparent transistors

Elias Aperathitis 1Vicky Kambilafka 1Mircea Modreanu 4Roussos Skervelakis 3George Kiriakidis 2,3

1. Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1527, 71110 Heraklion, Crete, Greece, P.O. Box 1527, Heraklion 71110, Greece
2. University of Crete, Iraclion 71409, Greece
3. Institute of Electronic Structure and Laser, FORTH,, P.O. Box 1527, Vassilika Vouton, Heraklion 71110, Greece
4. University College Cork, Tyndall National Institute (TYNDALL), Lee Maltings, Prospect Row, Cork, Ireland

Abstract

Fig.1 Source-drain current as a function of

source-drain voltage for gate voltages up to 20V.

ZnO is a wide band gap semiconductor (Eg ~ 3.3eV) with high exciton binding energy (~60 meV), has good transparency and its conductivity approaches that of the widely used n-type indium-tin-oxide (ITO). As a result, ZnO is the ideal material for many applications in the emerging field of transparent electronics and optoelectronics. While achieving p-type ZnO in a controllable, reproducible and reliable manner remains difficult, amorphous ZnO has been used as channel layer in the fabrication of transparent thin film transistors (TTFTs).

ZnO-based TTFTs  have been fabricated with promising results in replacing a-Si TFTs for many transparent applications (flat panel displays, oscillators, flexible electronics, etc).The ZnO-based materials which have been reported as channel layer in these TTFTs are: ZnO, ZnO:N and Zn-M-O where M=In, Ga, Sn.

In this investigation we report on the fabrication of TTFT having ZnN and ZnInO of varying Indium and Oxygen content   as channel and source-drain materials. The gate-bottom TFTs were fabricated on silica substrates, having rf-sputtered ITO as gate and HfO2 or SiO2 as the dielectric. The n-type ZnN channel layer was deposited by rf-sputtering from a zinc nitride target whereas the ZnInO layer was deposited by dc-magnetron sputtering utilizing a metallic ZnIn target in a varying oxygen plasma.

Typical IDS-vs-VDS characteristic of the normally off transistor (after annealing at 410oC in flowing nitrogen) having ZnN channel, HfO2 dielectric and metallic (Ti/Au) source and drain is seen in Fig.1. A direct comparison of the required annealing on the output characteristics of the devices as well as the material transport characteristics will be addressed along with target and processing flow for the TTFT fabrication.


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/15678 must be provided.

 

Related papers
  1. Ultra Sensitive Metal Oxide Gas Sensing Elements
  2. Optical spectroscopy: from experimental measurements to band structure determination
  3. Thickness and dc magnetron sputtering growth temperature influence on ZnO thin films optical properties
  4. Direct current magnetron sputtering deposition parameters effect on the properties of Silicon doped Aluminum Zinc Oxide thin films
  5. Exploring the optical and electrical properties of SrCu2O2: theoretical and experimental studies
  6. Optical and electrical properties of oriented SrCu2O2 thin films grown by pulsed laser deposition
  7. p-type ZnO:N thin films fabricated by rf-sputtering in oxygen plasma from ZnN target
  8. Phase transformation during the annealing of thin films in Sr-Cu-O system analyzed with in situ studies by X-ray diffraction and Raman spectroscopy
  9.  Study of the growth conditions of SrCu2O2 thin films deposited by injection MOCVD
  10. Derivation of the complex refractive index in the infrared region of the spectrum from the analysis of optical measurements
  11. Undoped and Al-doped ZnO films with tuned properties by pulsed laser deposition
  12. The effect of PLD deposition parameters on the properties of p-SrCu2O2/n-Si diodes
  13. Correlation between surface and electrical properties of ITO and ITON thin films
  14. Optical characterization of HfO2 by spectroscopic ellipsometry: dispersion models and direct data inversion
  15. An RBS Study of Thin PLD and MOCVD Strontium Copper Oxide Layers
  16. Investigation on optical properties and conduction mechanism of p-type SrCu2O2
  17. Optical properties of ZnN thin films fabricated by rf-sputtering from ZnN target
  18. Effect of Chlorine doping on electrical and optical properties of ZnO thin films
  19. Nanostructured metal oxide thin films for gas sensors

Presentation: Poster at E-MRS Fall Meeting 2008, Symposium B, by Elias Aperathitis
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-12 11:28
Revised:   2009-06-07 00:48
Google
 
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine