Fig.1 Source-drain current as a function of

ZnO is a wide band gap semiconductor (Eg ~ 3.3eV) with high exciton binding energy (~60 meV), has good transparency and its conductivity approaches that of the widely used n-type indium-tin-oxide (ITO). As a result, ZnO is the ideal material for many applications in the emerging field of transparent electronics and optoelectronics. While achieving p-type ZnO in a controllable, reproducible and reliable manner remains difficult, amorphous ZnO has been used as channel layer in the fabrication of transparent thin film transistors (TTFTs).

ZnO-based TTFTs  have been fabricated with promising results in replacing a-Si TFTs for many transparent applications (flat panel displays, oscillators, flexible electronics, etc).The ZnO-based materials which have been reported as channel layer in these TTFTs are: ZnO, ZnO:N and Zn-M-O where M=In, Ga, Sn.

In this investigation we report on the fabrication of TTFT having ZnN and ZnInO of varying Indium and Oxygen content   as channel and source-drain materials. The gate-bottom TFTs were fabricated on silica substrates, having rf-sputtered ITO as gate and HfO₂ or SiO₂ as the dielectric. The n-type ZnN channel layer was deposited by rf-sputtering from a zinc nitride target whereas the ZnInO layer was deposited by dc-magnetron sputtering utilizing a metallic ZnIn target in a varying oxygen plasma.

Typical I_DS-vs-V_DS characteristic of the normally off transistor (after annealing at 410^oC in flowing nitrogen) having ZnN channel, HfO₂ dielectric and metallic (Ti/Au) source and drain is seen in Fig.1. A direct comparison of the required annealing on the output characteristics of the devices as well as the material transport characteristics will be addressed along with target and processing flow for the TTFT fabrication.

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