SrCu₂O₂ is found to be a promising p-type transparent conductive oxide (TCO). Here, we report on a study of SrCu₂O₂ thin films grown by pulsed laser deposition (PLD) on crystalline substrates (sapphire, Ge). The stoichiometric phase can be obtained under thermodynamical growth conditions, e.g. deposition temperature of 500°C and oxygen pressure of 10^-5 mbar, according to the phase diagram of bulk strontium-copper-oxygen. The lattice constants and texture of the oriented SrCu₂O₂ films are determined by X-ray diffraction (XRD) using a four-circle diffractometer so as to deduce the contact plane and the orientation of a and b axes (i.e., axes of high conductivity). The film orientation is also determined by Raman scattering and IR absorption measurements according to the theoretical vibrational analysis based on first-principle calculations. Then, the films are post annealed under a controlled oxygen pressure and their electrical properties (conductivity, hole concentration and mobility) are measured and interpreted in terms of anisotropy of conductivity in the crystal structure of SrCu₂O₂ and of stoichiometry provided by electron probe microanalysis (EPMA).

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