High-k SrZrO₃ perovskite thin films, suitable for microelectronics applications were deposited under various conditions, on plane Si(100) substrates by direct liquid injection metal-organic chemical vapor deposition (MOCVD) method. Depending on the deposition temperature, films were either crystallized either amorphous. Amorphous films were annealed in order to obtain the expected orthorhombic perovskite structure.

X-ray reflectometry method is a versatile and non-destructive technique for a fast and accurate thickness determination of thin layered heterostructures. In that case, the model-independent Fourier-inversion method applied to a reflectivity curve allows a determination of the individual film thicknesses.

Reflectometry measurements provide the thicknesses of individual layer as well as multi-layers of a stack formed in the films. To estimate the order of the multi-layers, SIMS measurements were also conducted on all the studied thin films. Thicknesses were successfully confirmed by this destructive method and chemical environment of the films was determined as well as the composition of the layers. This information on as-deposited and post-annealed films was also compared with infrared transmission measurements (FTIR) giving clues on desorption of volatile species during deposition or annealing. Thus, crystallographic and chemical structures were precised on studied samples.

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