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ZnO:Mn DMS - growth and characterization

Ekaterina Chikoidze 1,2Yves Dumont 1Jurgen Von Bardeleben Gerome Gleize 

1. CNRS, Laboratoire de Physique des Solides et de Cristallogenese, 1 Place Aristide Briand, Meudon F 92195, France
2. Tbilisi State University, Material Science Department, 3, Chavchavdze, Tbilisi 30128, Georgia


As a wide bang gap material, with large exciton binding energy, ZnO has been paid attention as a material for realizing transparent DMS's. When Mn is incorporated in ZnO, a large controversy is found between magnetic properties: room temperature ferromagnetism [1] or at low temperature[2], even attributed to extrinsic phase[3].We report the correlation between structural, magnetic, optical and electrical properties of a series of thin films of Zn1-xMnxO. layers have been grown by MOCVD technique. Mn content varies x=0.00 -0.44 range. Veggard's law behavior for cation-cation distance has been found, justifying the achievement of Zn1-xMnxO. EPR measurements prove the substitution incorporation of Mn2+ in zinc site. SQUID and EPR measurements reveal an antiferromagnetic coupling for ZnMnO layers with an effective exchange constant of J1/kB = -15 K [4]. Raman spectroscopy results show Mn2+ related band and alloy effect well pronounced for ZnO matrix related phonon lines.

1. P. Sharma et al., Nature Materials, 2 (2003) 673

2. S. W. Jung,S.-J. An, and Gyu-Chul Yi , C. U. Jung , Sung-Ik Lee et all Appl.

Phys. Lett. 81 4561 (2002)

3. Darshan et al., Nature Materials, 3(2004) 709

4. E. Chikoidze, J. von Bardeleben, Y. Dumont et al. J. Appl. Phys. 97 D 316 (2005)


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Presentation: Oral at E-MRS Fall Meeting 2006, Symposium E, by Ekaterina Chikoidze
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-15 13:12
Revised:   2009-06-07 00:44