Search for content and authors

p-type ZnO:N thin films fabricated by rf-sputtering in oxygen plasma from ZnN target

Vicky Kambilafka 1Maria G. Androulidaki 1Katerina Tsagaraki 1Zacharias Viskadourakis 2Elias Aperathitis 1

1. Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1527, 71110 Heraklion, Crete, Greece, P.O. Box 1527, Heraklion 71110, Greece
2. University of Crete, Materials Science and Technology Department, P.O. Box 2208, Heraklion 71003, Greece


ZnN is a relatively new material, and even though its physical properties are not well studied and there is a controversy concerning its optical band gap, it has been used for the fabrication of p-type ZnO:N films through oxidation at temperatures ≥400oC. Until now, ZnN thin films had been fabricated by rf-MBE, MOCVD, sputtering or ammonization of Zn and electrochemically. In a recent investigation we had fabricated zinc nitride thin films by rf-sputtering of a commercially available zinc nitride target in a mixture of Ar-N2 plasma and examined the properties of the films [2,3]. These n-type zinc nitride films had been converted into p-type ZnO:N films by oxidation at 400oC [1,2].

In this investigation, we report on the properties of zinc nitride films fabricated from zinc nitride target by rf-sputtering in plasma containing a mixture of Ar-O2 gases on unintentionally heated glass and Si substrates. The structural (X-ray diffraction, AFM), optical (UV-NIR trans. & refl. as well as PL emissions at 18K using a 325nm He–Cd laser) and electrical (Hall effect, Van der Pauw technique, Seebeck effect-thermoelectric power) properties of the films were examined as a function of the oxygen content in the plasma, just after deposition as well as after annealing in flowing nitrogen.

Films deposited in plasma containing 10-40% O2 were p-type materials with resistivity 105 Ωcm. XRD analysis revealed that the films had the ZnO structure. The resistivity of these p-type ZnO:N films was decreased to around 103 Ωcm upon annealing in flowing N2.

The possibility of fabricating a p/n junction from the zinc nitride target, in one deposition run without breaking the sputtering vacuum, which is actually a transparent p/n ZnO/ZnN heterostructure, will be addressed. 

[1] V. Kambilafka, et al, Superlattices and Microstructures 42 (2007) 55.

[2] V. Kambilafka, et al, Thin Solid Films 515 (2007) 273.

[3] P. Voulgaropoulou, et al, Thin Solid Films (2008) : doi: 10.1016/j.tsf.2008.04.025


Legal notice
  • Legal notice:

Related papers

Presentation: Oral at E-MRS Fall Meeting 2008, Symposium B, by Elias Aperathitis
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-12 11:02
Revised:   2009-06-07 00:48