Anomalous behavior of Fe3O4 films on Si(100)

Olinda Conde 1Zacharias Viskadourakis 2,3Ioannis Giapintzakis 3Luisa Paramés 1

1. University of Lisbon, Faculty of Sciences (FCUL), Campo Grande, Ed. C8, Lisboa 1749-016, Portugal
2. University of Crete, Materials Science and Technology Department, P.O. Box 2208, Heraklion 71003, Greece
3. University of Cyprus (UCY), Kallipoleos Avenue, Nicosia 1678, Cyprus

Abstract

Amongst the ferromagnetic materials that are predicted to be half-metallic, magnetite (Fe3O4) is one of the most interesting because of its extremely high Curie temperature of ~ 860 K. Both properties make Fe3O4 a very attractive material for application in spintronic devices operating at room temperature.

Fe3O4 thin films were grown on Si(100) to ensure compatibility with Si technology. The pulsed laser deposition (PLD) technique was used and the substrate temperature was maintained at a relatively low value of 210 ºC. The background gas consisted on a mixture of oxygen and argon.

The as-grown layers were studied vis-a-vis of their phase purity, stoichiometry, magnetic, electrical and magnetotransport properties. The latter show an anomalous behavior in the temperature range 200 – 240 K where a resistivity drop and a signal reversal of the magnetoresistance are observed. These results will be discussed in terms of an inversion layer formed at the interface between SiO2 and Si in the thinner films. Moreover, Seebeck coefficient data recorded on these films also show abnormal high values.

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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium E, by Olinda Conde
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-25 16:02
Revised:   2009-06-07 00:48
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