Through the last decades great effort has been put in the microelectronics industry on the fabrication of new devices always trying to reduce size while at the same time increasing performance and reliability. However, the increase of temperature on these devices is the main problem arising. Thus, thermal management and controlling of temperature on the devices are important issues. To address this problem, accurate thermal characterization of the materials been used is very important.

Materials like La₅Ca₉Cu₂₄O₄₁ have magnetic thermal conductivity (of the order of 100 W/mK at room temperature) as efficient as metallic heat conductors with the benefit of being electrically insulating. Furthermore La₅Ca₉Cu₂₄O₄₁ is highly anisotropic.

A possible strategy for heat dissipation is the use of a La₅Ca₉Cu₂₄O₄₁ thin film to guide the heat to a heat sink.

Traditional steady state methods used for thermal conductivity measurements cannot be employed on thin films due to their very small mass. A dynamic method (3ω) is therefore used.

We will present thermal conductivity measurements of a La₅Ca₉Cu₂₄O₄₁ thin film using the 3ω method.

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