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High resolution X-ray diffraction studies of CrO2 films on Al2O3

Olinda Conde 1Nuno Franco 2Eduardo Alves 2António J. Silvestre 3William R. Branford 4Karen A. Yates 4Lesley F. Cohen 4

1. University of Lisbon, Faculty of Sciences (FCUL), Campo Grande, Ed. C8, Lisboa 1749-016, Portugal
2. Instituto Técnológico Nuclear (ITN), Sacavém 2686, Portugal
3. Instituto Superior de Engenharia de Lisboa and ICEMS, R. Conselheiro Emídio Navarro, 1, Lisboa 1959-007, Portugal
4. Imperial College, Blackett Laboratory, Prince Consort Road, London SW72AZ, United Kingdom


Chromium dioxide is an important material for spintronic applications at room temperature due to its ferromagnetic half-metallicity (transport spin polarization of ~100%) and a relatively high Curie temperature of ~ 400 K.

Films were grown on Al2O3 (0001) by atmospheric pressure chemical vapour deposition in a wide range of deposition temperatures and oxygen flowrates. The fact that the films are grown on lattice mismatched substrates leads to film strain which induces defects and polycrystalline growth. In particular, a buffer layer of (antiferromagnetic insulator) Cr2O3 develops at the CrO2/Al2O3 interface.

Here we use high resolution X-ray diffraction methods to study the crystalline (epitaxial) quality, lattice parameters, orientation relations, strain gradient, thickness and roughness of the layers. These measurements are complemented by concentration depth profiling using ion beam analysis to follow the composition through the layer structure. The results will be correlated with electrical transport and spin polarization data reported elsewhere.


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Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium E, by Olinda Conde
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-25 14:14
Revised:   2009-06-07 00:48