Thickness and dc magnetron sputtering growth temperature influence on ZnO thin films optical properties

Mirela Suchea 1,3Savas Christoulakis 1,2Theophanis Kitsopoulos 1,3George Kiriakidis 1,2

1. PEML IESL (FORTH), 100, N. Plastira str, Heraklion 70013, Greece
2. Physics Dpt, Univ. of Crete, PO Box 1527, Heraklion 71409, Greece
3. Chemistry Dpt, Univ. of Crete, PO Box 1527, Heraklion 71409, Greece

Abstract

Zinc oxide transparent conductive thin films with different thickness were grown by dc magnetron sputtering technique at different growth temperatures onto silicon and Corning glass substrates. X-ray diffraction characterization showed that all the ZnO films are polycrystalline, highly textured with the c axis perpendicular to the substrate surface. The dependence of their optical and electrical properties on the thickness and the growth temperature was investigated. In all cases, the films were found to be highly transparent in the visible wavelength region with an average transmittance of 90%, with a fall-off for wavelengths shorter than 380 nm, characteristics of high quality ZnO films. The position and the shape of the absorption edge observed for wavelengths below 380 nm were found depending on the film thickness and growth temperature. Moreover, an additional absorption band centred near 360 nm was clearly recorded, for all growth temperatures and thicknesses larger than 40 nm.  Although a similar absorption band attributed to excitonic resonances as those related to the exciton/LO phonons has been reported by other researchers, this study focuses on a coherent study of dc magnetron sputtering growth parameters effect on the position and intensity of this absorption local.

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Presentation: Poster at E-MRS Fall Meeting 2008, Symposium B, by George Kiriakidis
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-19 11:32
Revised:   2009-06-07 00:48
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