Dilute nitride alloy III-V semiconductors are being paid intense attention, due to the novel physics induced by the nitrogen incorporation in small percentages. Following the development of quaternary InGaAsN quantum wells, lower-dimensional InGaAsN quantum dots (QDs) have attracted an increasing interest and been regarded as promising structures for extending the emission wavelength to 1.55μm and beyond. In this report, we present variable-temperature photoluminescence (PL) spectra of self-assembled InGaAsN/GaAs QDs grown on GaAs substrate with molecular beam epitaxy. Two kinds of In_0.3Ga_0.7AsN_0.005 and In_0.5Ga_0.5AsN_0.006 QDs have been studied. Anomalous temperature dependence of their PL spectra was found. A newly developed luminescence model for localized states was employed to quantitatively interpret the PL results. The carrier re-distribution within different QDs is found to be responsible for the observed anomalies.

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