Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 4th, Monday |
|
14:00 |
00:45:00 |
Invited oral |
Hadis Morkoc |
Preparation and properties of ZnO based heterogeneous devices |
14:45 |
00:45:00 |
Invited oral |
Bruno K. Meyer |
Homoepitaxy of ZnO : from the substrate to doping |
15:50 |
00:20:00 |
Oral |
Krzysztof Grasza |
Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface |
16:10 |
00:20:00 |
Oral |
Matthew H. Kane |
Growth of ZnO thin films by metalorganic chemical vapor deposition for optoelectronic and spintronic applications |
16:30 |
00:20:00 |
Oral |
Swen Graubner |
Investigations of ZnO substrates after high temperature annealing |
16:50 |
00:20:00 |
Oral |
Seiichi Kishimoto |
Photoconductivity of Ga doped ZnO Film grown by Reactive Plasma Deposition Method |
September 5th, Tuesday |
|
09:00 |
00:45:00 |
Invited oral |
Henri J. Mariette |
Manipulating the spin states of a single magnetic atom in a II-VI quantum dot. |
09:45 |
00:45:00 |
Invited oral |
Detlef Hommel |
CdSe quantum dots and their application in surface emitters and micropillars: A comparison to analogous nitride structures |
11:00 |
00:20:00 |
Oral |
Justyna Trzmiel |
Nonexponential photoionization of the DX related centers in indium doped Cd1-xMnxTe. On the relationship between the stretched exponential and two-exponential relaxation models. |
11:20 |
00:20:00 |
Oral |
Daniel Sprinzl |
Dephasing Of Free Carriers And Excitons In Bulk CdTe |
11:40 |
00:20:00 |
Oral |
Kazumichi Akita |
Sub-μm-mesa waveguides with strong light confinement for urtrafast intersubband optical switches based on wide-gap II-VI quantum wells |
12:00 |
00:20:00 |
Oral |
Ionut Marius Enculescu |
Deposition and properties of CdTe nanowires prepared by template replication |
14:00 |
00:45:00 |
Invited oral |
Ralph B. James |
Material properties limiting the use of cadmium zinc telluride X- and gamma detectors |
14:45 |
00:45:00 |
Invited oral |
Arnold Burger |
Materials requirements in the group - CdTe, CdZnTe and CdMnTe - and recent advances for X-ray and gamma-ray applications. |
15:50 |
00:20:00 |
Oral |
Petro Fochuk |
Self-compensation processes in CdTe<In> single crystals |
16:10 |
00:20:00 |
Oral |
Hamid Haratizadeh |
Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices |
16:30 |
00:20:00 |
Oral |
Rozaliya I. Barabash |
Characterization of Growth Defects in GaN Layers withX-ray Microbeam |
September 6th, Wednesday |
|
14:00 |
00:20:00 |
Oral |
Masahiro Tahashi |
Metal-Organic Vapor Phase Epitaxy Growth and Crystallographic Study of Vanadium-doped ZnSe |
14:20 |
00:20:00 |
Oral |
Vitalii Y. Ivanov |
Two color spectroscopy of ZnSe:Cr |
14:40 |
00:20:00 |
Oral |
Sergey Sadofev |
ZnO/ZnMgO multiple quantum wells on sapphire: MBE growth, structural and lasing properties |
September 7th, Thursday |
|
09:00 |
00:45:00 |
Invited oral |
Michael Giersig |
Novel semiconductor nanorod/nanowire architectures. |
09:45 |
00:45:00 |
Invited oral |
Dang Le Si |
Cathodoluminescence study of wide band gap ZnO nanorod heterostructures. |
11:00 |
00:45:00 |
Invited oral |
Andrey Bakin |
ZnO nanostructures, thin films and devices |
11:45 |
00:20:00 |
Oral |
Eva Schlenker |
Electrical characterization of ZnO nanorods |
12:05 |
00:20:00 |
Oral |
Jorge Serrano |
Lattice Dynamics of Wurtzite ZnO: an Experimental and Ab-initio Study |
14:00 |
00:20:00 |
Oral |
Ewa Przezdziecka |
Optical properties of p-type ZnO:(N, As, Sb) |
14:20 |
00:20:00 |
Oral |
Andrey Bakin |
Fabrication of ZnO Nanorod-based Single Quantum Well Structures |
14:40 |
00:20:00 |
Oral |
Mustafa M. Demir |
Controlled Precipitation of Monodisperse ZnO Nanocrystals via Acid-Catalyzed Estrification of Zinc Acetate |
15:50 |
00:45:00 |
Invited oral |
Niels Keller |
Ferromagnetic oxide semiconductors: using off-stoichiometry to tune low-dimension magnetism and consequently the iron valency |
16:35 |
00:45:00 |
Invited oral |
Tomasz Dietl |
Origin of ferromagnetism and phase separations in diluted magnetic semiconductors |