In order to promote growth of ZnO films on ZnO substrates, defects introduced by the surface polishing procedure have to be removed. We investigate the influence of a high temperature annealing in O₂-atmosphere on the structural porperties of the ZnO substrates by atomic force microscopy. Only at temperatures above 1100°C atomic steps (terasses) are seen, the remaining defects can be assigned to dislocations in a density between 10⁴ to 10⁵ cm^-2. Interestingly the electrical properties also change from high resistive to n-type conduction, which make the substrates - apart from the homoepitaxial growth on a perfect template - suitable for top-to-bottom contacts.

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