ZnMgO heterostructures grown by MOCVD require very high substrate temperatures (>900 °C) which make p-type doping by N or P rather difficult if not impossible. It was therefore our aim to explore the growth of ZnMgO epilayers using CVD at much lower substrate temperatures. The substrate temperature was between 600 and 650 °C, metallic precursors (Zn, Mg) were used with NO₂ as oxygen precursor. The properties of the films were investigated by low temperature photoluminescence, the Mg content was determined by SIMS and EDX. We find a linear dependence of the band edge recombination on the magnesium content. The maximum Mg content in our samples was 28 ± 2 %.

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