Recently, as a new functional device material, diluted magnetic semiconductors (DMS) have attracted special interest from many researchers. However, Curie temperature for most of DMS is lower than room temperature so that it has been desired to get DMS with Curie temperature higher than room temperature for practical applications. K. Sato et al. reported that Vanadium(V)-doped ZnSe is expected theoretically as DMS inducing ferromagnetism above room temperature without carrier doping.¹⁾

V-doped ZnSe film was grown on (100)GaAs substrate by MOVPE method in an atmospheric pressure under a hydrogen flow. Dimethyl Se and dimethyl Zn were used as the source materials. Vanadocene (V(C₅H₅)₂) was used as a dopant source for vanadium. The detailed experimental condition is presented in the previouns paper.²⁾ The local structure and the crystallinity of sample was investigated by using XAFS and XRD.

On the research of the lattice distortion of V-doped ZnSe crystal three models were constructed as following cases; vanadium atoms (1) cohere and have the metal structure, (2) are replaced with the Zn-site, (3) are replaced with the Se-site. Fig.1 shows the relations between notation radial distribution function and magnitude of Fourier transformation F(r) obtained by XAFS spectra for experimental and calculation results. Theoretical spectra calculated for the Se-site case comparatively agrees with the experimental one. This result indicates that vanadium atoms are replaced in the Se-site and/or exist in interstitial sites.

1) K.Sato et al. : Jpn. J. Appl. Phys., 40(2001) 651.

2) M.Tahashi et al. : Materials Transactions, 46(2005) 1908.

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