A CdTe film was grown on a (100)GaAs substrate by MOVPE method under atmospheric pressure. Dimethyl cadmium (DMCd), diethyl telluride (DETe) and triethyl antimony (TESb) were used as the source gases for cadmium, tellurium,and antimony, respectively. H₂ was used as the carrier gas. The substrate was heated on the graphite susceptor induced by RF irradiation. Prior to the growth of CdTe, the GaAs substrate was heated in H₂ introducing TESb for 15 min(Sb-treatment). The TESb supply rate was varied from 0 to 3 μmol/min and the temperature of the GaAs substrate was varied from 500 to 650^oC, to elucidate the effect of TESb treatment. After the TESb treatment, the CdTe film was grown for 2 hours. The typical growth conditions of CdTe are presented in the previous paper¹⁾.

The CdTe film grown on (100)GaAs substrate treated with TESb of 3μmol/min was high-quality, featureless and free from cracks. The X-ray diffraction shown in Fig.1 suggests that the formation of Sb layer and/or GaSb layer at the interface is important to obtain featureless CdTe film on GaAs substrate.

1) H. Goto, S. Sawada, M. Tahashi, T. Ido : Jpn. J. Appl. Phys. 44 (2005) 146

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