The considerable interest in nanorod structures stems from novel physics and applications opened up by their 1D character. In the case of wide band gap semiconductors, such as ZnO with record exciton binding energy of 60 meV, also high radiative quantum efficiency could be expected, which makes ZnO nanorods particularly attractive as emitters in the UV spectral range.
In this presentation we report a cathodoluminescence (CL) investigation of ZnO-based nanorods grown by MOCVD and by MBE combined with vapour phase transport. Samples are ZnO/ZnMgO quantum wells grown on top of ZnO nanorods with lengths of 1-5 µm and diameters of 50-500 nm. CL of single nanorods has been measured to probe structural and compositional properties along the nanorod axis. CL results at T = 5K and room temperature will be discussed.

This work is supported by the European Union projects HPRN-CT-2002-00298 "Photon Mediated Phenomena in Semiconductor Nanostructures", STREP FP6-016924 "Nanophotonic and Nanoelectronic Devices from Oxide Semiconductors (NANDOS)", and the Associated International Laboratory France-Korea "Center for Photonics and Nanostructures (CPN)".

CL at T = 5 K of a single ZnO nanorod at different locations 1 - 4 along the nanorod axis.

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1. ZnO nanostructures, thin films and devices
2. Time-resolved ODMR investigations of II-VI based DMS heterostructures
3. Electrical characterization of ZnO nanorods
4. Fabrication of ZnO Nanorod-based Single Quantum Well Structures
5. Characterization of Luminescence in thick MgZnO Layers and MgZnO/ZnO Quantum Wells
6. ZnMgO-ZnO based Heterostructures and Nanopillars grown by MOVPE